STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 130 A, 710 V Enhancement, 3-Pin STY139N65M5
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
130A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
363nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.3 mm
Height
20.3mm
Length
15.9mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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Информацията за складовите наличности временно не е налична.
€ 54,13
€ 27,06 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
2
€ 54,13
€ 27,06 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
2
| количество | Единична цена |
|---|---|
| 2 - 4 | € 27,06 |
| 5+ | € 26,39 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
130A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
363nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.3 mm
Height
20.3mm
Length
15.9mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products