Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
HU3PAK
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
7
Peak Reverse Current Ir
1.2mA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
1.1kA
Maximum Operating Temperature
175°C
Length
11.9mm
Height
3.6mm
Width
14.1mm
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Информацията за складовите наличности временно не е налична.
€ 2 898,47
€ 4,831 Each (On a Reel of 600) (ex VAT)
600
€ 2 898,47
€ 4,831 Each (On a Reel of 600) (ex VAT)
Информацията за складовите наличности временно не е налична.
600
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
HU3PAK
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
7
Peak Reverse Current Ir
1.2mA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
1.1kA
Maximum Operating Temperature
175°C
Length
11.9mm
Height
3.6mm
Width
14.1mm
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
