
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Информацията за складовите наличности временно не е налична.
€ 85,26
€ 1,705 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
50
€ 85,26
€ 1,705 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
50
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 245 | € 1,705 | € 8,53 |
| 250 - 495 | € 1,298 | € 6,49 |
| 500+ | € 1,151 | € 5,75 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.