
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
950μm
Length
8mm
Width
8mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Информацията за складовите наличности временно не е налична.
€ 254,60
€ 5,092 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 254,60
€ 5,092 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
50
| количество | Единична цена | Per Ролка |
|---|---|---|
| 50 - 120 | € 5,092 | € 25,46 |
| 125+ | € 4,243 | € 21,22 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
950μm
Length
8mm
Width
8mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.