Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Информацията за складовите наличности временно не е налична.
€ 9,54
€ 4,768 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 9,54
€ 4,768 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 18 | € 4,768 | € 9,54 |
| 20 - 98 | € 4,612 | € 9,22 |
| 100 - 198 | € 4,469 | € 8,94 |
| 200+ | € 3,875 | € 7,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
