Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 34,43
€ 1,721 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
20
€ 34,43
€ 1,721 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
20
| количество | Единична цена | Per Тръба |
|---|---|---|
| 20 - 98 | € 1,721 | € 3,44 |
| 100 - 198 | € 1,535 | € 3,07 |
| 200+ | € 1,32 | € 2,64 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
