
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
25A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
450V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
8.4μs
Maximum Gate Emitter Voltage VGEO
16 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.55V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
AEC-Q101
Width
6.2mm
Series
Automotive Grade
Automotive Standard
AEC-Q101
Energy Rating
300mJ
Детайли за продукта
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
Информацията за складовите наличности временно не е налична.
€ 2 596,29
€ 1,039 Each (On a Reel of 2500) (ex VAT)
2500
€ 2 596,29
€ 1,039 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
25A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
450V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
8.4μs
Maximum Gate Emitter Voltage VGEO
16 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.55V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
AEC-Q101
Width
6.2mm
Series
Automotive Grade
Automotive Standard
AEC-Q101
Energy Rating
300mJ
Детайли за продукта
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.