STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 53 A, 500 V, 4-Pin ISOTOP STE53NC50
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Детайли за продукта
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
€ 34,90
€ 34,90 Всеки (ex VAT)
1
€ 34,90
€ 34,90 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
1
| количество | Единична цена |
|---|---|
| 1 - 9 | € 34,90 |
| 10 - 49 | € 32,21 |
| 50 - 99 | € 30,74 |
| 100 - 199 | € 27,11 |
| 200+ | € 25,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Детайли за продукта
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products