Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.17mm
Length
6.6mm
Automotive Standard
No
Детайли за продукта
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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Информацията за складовите наличности временно не е налична.
€ 1 882,90
€ 0,753 Each (On a Reel of 2500) (ex VAT)
2500
€ 1 882,90
€ 0,753 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
| количество | Единична цена | Per Ролка |
|---|---|---|
| 2500 - 2500 | € 0,753 | € 1 882,90 |
| 5000+ | € 0,736 | € 1 839,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.17mm
Length
6.6mm
Automotive Standard
No
Детайли за продукта
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
