STMicroelectronics STripFET Type P-Channel MOSFET, 12 A, 30 V Enhancement, 3-Pin TO-252 STD26P3LLH6

Номер на артикул на RS: 792-5717Марка: STMicroelectronics№ по каталога на производителя: STD26P3LLH6
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

6.6mm

Standards/Approvals

No

Height

2.4mm

Width

6.2 mm

Automotive Standard

No

Детайли за продукта

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 8,88

€ 0,888 Each (In a Pack of 10) (ex VAT)

STMicroelectronics STripFET Type P-Channel MOSFET, 12 A, 30 V Enhancement, 3-Pin TO-252 STD26P3LLH6
Изберете тип опаковка

€ 8,88

€ 0,888 Each (In a Pack of 10) (ex VAT)

STMicroelectronics STripFET Type P-Channel MOSFET, 12 A, 30 V Enhancement, 3-Pin TO-252 STD26P3LLH6

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

количествоЕдинична ценаPer Опаковка
10 - 10€ 0,888€ 8,88
20+€ 0,843€ 8,43

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

6.6mm

Standards/Approvals

No

Height

2.4mm

Width

6.2 mm

Automotive Standard

No

Детайли за продукта

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more