Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Series
MDmesh II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.4mm
Length
10.1mm
Standards/Approvals
RoHS
Width
6.6mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Информацията за складовите наличности временно не е налична.
€ 17,51
€ 3,503 Each (Supplied as a Tape) (ex VAT)
Стандарт
5
€ 17,51
€ 3,503 Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Лента |
|---|---|---|
| 5 - 45 | € 3,503 | € 17,51 |
| 50 - 120 | € 3,021 | € 15,10 |
| 125+ | € 2,368 | € 11,84 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Series
MDmesh II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.4mm
Length
10.1mm
Standards/Approvals
RoHS
Width
6.6mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
