STMicroelectronics STripFET II N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK STB30NF10T4
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
9.35mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 6,82
€ 1,364 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 6,82
€ 1,364 Each (In a Pack of 5) (ex VAT)
Стандарт
5
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 5 | € 1,364 | € 6,82 |
| 10 - 95 | € 1,149 | € 5,74 |
| 100 - 495 | € 0,895 | € 4,47 |
| 500 - 995 | € 0,763 | € 3,82 |
| 1000+ | € 0,636 | € 3,18 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
9.35mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products