STMicroelectronics Bipolar Transistor, 16 A NPN, 700 V, 3-Pin TO-263

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

• Fully characterized at 125 ˚C
• Very high switching speed
• Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
• Integrated free-wheeling diode
• High voltage capability
• Minimum lot-to-lot spread for reliable operation
• Large RBSOA
• Low spread of dynamic parameters
• Applications
• Electronic transformers for halogen lamps
• Switch mode power supplies