
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Информацията за складовите наличности временно не е налична.
€ 70,87
€ 1,417 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 70,87
€ 1,417 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
50
| количество | Единична цена | Per Ролка |
|---|---|---|
| 50 - 245 | € 1,417 | € 7,09 |
| 250 - 495 | € 1,078 | € 5,39 |
| 500+ | € 0,957 | € 4,78 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.