Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1.2kV
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Информацията за складовите наличности временно не е налична.
€ 424,59
€ 14,153 Each (In a Tube of 30) (ex VAT)
30
€ 424,59
€ 14,153 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1.2kV
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
