
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Информацията за складовите наличности временно не е налична.
€ 12,29
€ 12,29 Всеки (ex VAT)
Стандарт
1
€ 12,29
€ 12,29 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
| количество | Единична цена |
|---|---|
| 1 - 9 | € 12,29 |
| 10 - 1199 | € 12,14 |
| 1200+ | € 12,00 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.