Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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Информацията за складовите наличности временно не е налична.
€ 369,46
€ 369,46 1 Tube of 30 (ex VAT)
1
€ 369,46
€ 369,46 1 Tube of 30 (ex VAT)
Информацията за складовите наличности временно не е налична.
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
