Технически документи
Спецификации
Brand
ROHMProduct Type
Schottky Diode & Rectifier
Mount Type
Surface
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
SCS230AN
Rectifier Type
SiC Schottky
Pin Count
2
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The ROHM Schottky Barrier Diode is engineered for high-performance applications, delivering superior efficiency and reliability in power conversion systems. By utilising advanced silicon carbide technology, this diode offers a peak reverse voltage of 650V, making it ideal for demanding environments in applications such as factory automation, photovoltaic power conditioning, and electric vehicle charging. Its low forward voltage drop and negligible recovery time ensure minimal energy loss, thus enhancing the overall performance and longevity of your circuits. The robust thermal characteristics support high current ratings, complemented by a wide creepage distance, assuring reliable operation even at elevated temperatures.
Информацията за складовите наличности временно не е налична.
€ 16,39
€ 8,193 Each (Supplied as a Tape) (ex VAT)
Стандарт
2
€ 16,39
€ 8,193 Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
| количество | Единична цена | Per Лента |
|---|---|---|
| 2 - 8 | € 8,193 | € 16,39 |
| 10+ | € 8,031 | € 16,06 |
Технически документи
Спецификации
Brand
ROHMProduct Type
Schottky Diode & Rectifier
Mount Type
Surface
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
SCS230AN
Rectifier Type
SiC Schottky
Pin Count
2
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The ROHM Schottky Barrier Diode is engineered for high-performance applications, delivering superior efficiency and reliability in power conversion systems. By utilising advanced silicon carbide technology, this diode offers a peak reverse voltage of 650V, making it ideal for demanding environments in applications such as factory automation, photovoltaic power conditioning, and electric vehicle charging. Its low forward voltage drop and negligible recovery time ensure minimal energy loss, thus enhancing the overall performance and longevity of your circuits. The robust thermal characteristics support high current ratings, complemented by a wide creepage distance, assuring reliable operation even at elevated temperatures.