Технически документи
Спецификации
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Minimum Operating Temperature
-40°C
Maximum Power Dissipation Pd
1013W
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.
Информацията за складовите наличности временно не е налична.
€ 461,26
€ 461,26 Всеки (ex VAT)
1
€ 461,26
€ 461,26 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
1
Технически документи
Спецификации
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Minimum Operating Temperature
-40°C
Maximum Power Dissipation Pd
1013W
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.