Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximum Operating Temperature
150°C
Height
10.4mm
Length
30.6mm
Standards/Approvals
RoHS
Series
Low Drop
Energy Rating
8mJ
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 109,87
€ 1,099 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
100
€ 109,87
€ 1,099 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
100
| количество | Единична цена | Per Тръба |
|---|---|---|
| 100 - 490 | € 1,099 | € 10,99 |
| 500 - 990 | € 1,085 | € 10,85 |
| 1000 - 4990 | € 1,072 | € 10,72 |
| 5000+ | € 1,059 | € 10,59 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximum Operating Temperature
150°C
Height
10.4mm
Length
30.6mm
Standards/Approvals
RoHS
Series
Low Drop
Energy Rating
8mJ
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
