
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
16.5nC
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Информацията за складовите наличности временно не е налична.
€ 1 995,73
€ 0,798 Each (On a Reel of 2500) (ex VAT)
2500
€ 1 995,73
€ 0,798 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
16.5nC
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.