Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Информацията за складовите наличности временно не е налична.
€ 420,77
€ 0,14 Each (On a Reel of 3000) (ex VAT)
3000
€ 420,77
€ 0,14 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
| количество | Единична цена | Per Ролка |
|---|---|---|
| 3000 - 3000 | € 0,14 | € 420,77 |
| 6000 - 6000 | € 0,127 | € 382,20 |
| 9000 - 21000 | € 0,111 | € 333,11 |
| 24000+ | € 0,108 | € 322,59 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.