
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
69A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
38mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
185nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
400W
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Информацията за складовите наличности временно не е налична.
€ 112,21
€ 11,22 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 112,21
€ 11,22 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
10
| количество | Единична цена |
|---|---|
| 10 - 99 | € 11,22 |
| 100+ | € 11,08 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
69A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
38mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
185nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
400W
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.