STMicroelectronics Isolated STripFET 2 Type N-Channel Power MOSFET, 4 A, 60 V Enhancement, 8-Pin SOIC

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 20,95
€ 2,095 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
€ 20,95
€ 2,095 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
10
| количество | Единична цена | Per Ролка |
|---|---|---|
| 10 - 20 | € 2,095 | € 10,48 |
| 25 - 95 | € 1,987 | € 9,93 |
| 100 - 495 | € 1,557 | € 7,78 |
| 500+ | € 1,312 | € 6,56 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

