
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Maximum Operating Temperature
175°C
Length
28.25mm
Height
4.5mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
Информацията за складовите наличности временно не е налична.
€ 2 420,28
€ 0,968 Each (On a Reel of 2500) (ex VAT)
2500
€ 2 420,28
€ 0,968 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Maximum Operating Temperature
175°C
Length
28.25mm
Height
4.5mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.