Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Peak Reverse Current Ir
60μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
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Информацията за складовите наличности временно не е налична.
Запитване за цена
Each (On a Reel of 1000) (ex VAT)
1000
Запитване за цена
Each (On a Reel of 1000) (ex VAT)
Информацията за складовите наличности временно не е налична.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Peak Reverse Current Ir
60μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
