Технически документи
Спецификации
Brand
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Series
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Length
15.9mm
Height
41.2mm
Automotive Standard
AEC-Q101
Страна на произход
China
Детайли за продукта
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Информацията за складовите наличности временно не е налична.
€ 196,31
€ 6,544 Each (In a Tube of 30) (ex VAT)
30
€ 196,31
€ 6,544 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 120 | € 6,544 | € 196,30 |
| 150+ | € 6,245 | € 187,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Series
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Length
15.9mm
Height
41.2mm
Automotive Standard
AEC-Q101
Страна на произход
China
Детайли за продукта
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
