
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Информацията за складовите наличности временно не е налична.
€ 23,09
€ 2,31 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 23,09
€ 2,31 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
10
| количество | Единична цена |
|---|---|
| 10 - 99 | € 2,31 |
| 100 - 499 | € 2,10 |
| 500 - 999 | € 1,97 |
| 1000+ | € 1,95 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.