Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
183 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 8,13
€ 8,13 Всеки (ex VAT)
Стандарт
1
€ 8,13
€ 8,13 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
Информацията за складовите наличности временно не е налична.
| количество | Единична цена |
|---|---|
| 1 - 1 | € 8,13 |
| 2+ | € 7,72 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
183 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


