STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6

Номер на артикул на RS: 760-9673Марка: STMicroelectronics№ по каталога на производителя: STP260N6F6
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

DeepGate, STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

183 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Height

15.75mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 8,13

€ 8,13 Всеки (ex VAT)

STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6
Изберете тип опаковка

€ 8,13

€ 8,13 Всеки (ex VAT)

STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 1€ 8,13
2+€ 7,72

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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

DeepGate, STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

183 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Height

15.75mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more