Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
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Информацията за складовите наличности временно не е налична.
€ 82,10
€ 0,821 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
100
€ 82,10
€ 0,821 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
100
| количество | Единична цена | Per Тръба |
|---|---|---|
| 100 - 490 | € 0,821 | € 8,21 |
| 500 - 990 | € 0,808 | € 8,08 |
| 1000 - 1990 | € 0,799 | € 7,99 |
| 2000+ | € 0,789 | € 7,89 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
