Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Информацията за складовите наличности временно не е налична.
€ 92,27
€ 0,923 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 92,27
€ 0,923 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
| количество | Единична цена | Per Ролка |
|---|---|---|
| 100 - 490 | € 0,923 | € 9,23 |
| 500 - 990 | € 0,758 | € 7,58 |
| 1000 - 2990 | € 0,748 | € 7,48 |
| 3000+ | € 0,739 | € 7,39 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.