Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Series
STripFET
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Height
0.95mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Детайли за продукта
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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Информацията за складовите наличности временно не е налична.
€ 10,31
€ 1,031 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 10,31
€ 1,031 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 1,031 | € 10,32 |
| 100 - 490 | € 0,688 | € 6,88 |
| 500 - 990 | € 0,564 | € 5,64 |
| 1000 - 2990 | € 0,557 | € 5,57 |
| 3000+ | € 0,55 | € 5,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Series
STripFET
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Height
0.95mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Детайли за продукта
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
