
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Height
4.8mm
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Информацията за складовите наличности временно не е налична.
€ 7,62
€ 3,808 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 7,62
€ 3,808 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 18 | € 3,808 | € 7,62 |
| 20 - 98 | € 3,715 | € 7,43 |
| 100 - 198 | € 3,628 | € 7,26 |
| 200+ | € 3,394 | € 6,79 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Height
4.8mm
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.