
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Информацията за складовите наличности временно не е налична.
€ 7,09
€ 3,546 Each (In a Pack of 2) (ex VAT)
2
€ 7,09
€ 3,546 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
2
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 18 | € 3,546 | € 7,09 |
| 20 - 98 | € 3,12 | € 6,24 |
| 100 - 198 | € 2,788 | € 5,58 |
| 200+ | € 2,391 | € 4,78 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.