
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
60A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
108W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Maximum Operating Temperature
175°C
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Length
15.9mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Информацията за складовите наличности временно не е налична.
€ 108,09
€ 3,603 Each (In a Tube of 30) (ex VAT)
30
€ 108,09
€ 3,603 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 120 | € 3,603 | € 108,09 |
| 150 - 270 | € 3,513 | € 105,40 |
| 300+ | € 3,416 | € 102,49 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
60A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
108W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Maximum Operating Temperature
175°C
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Length
15.9mm
Automotive Standard
No
Детайли за продукта
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.