Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
Trench Gate Field Stop
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 46,87
€ 2,343 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
20
€ 46,87
€ 2,343 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
20
| количество | Единична цена | Per Тръба |
|---|---|---|
| 20 - 98 | € 2,343 | € 4,69 |
| 100 - 198 | € 2,092 | € 4,18 |
| 200+ | € 1,80 | € 3,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
Trench Gate Field Stop
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
