
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Информацията за складовите наличности временно не е налична.
€ 45,61
€ 4,56 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 45,61
€ 4,56 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
10
| количество | Единична цена |
|---|---|
| 10 - 99 | € 4,56 |
| 100 - 499 | € 4,51 |
| 500+ | € 4,46 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.