STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-220
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
40W
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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Информацията за складовите наличности временно не е налична.
€ 143,68
€ 2,874 Each (In a Tube of 50) (ex VAT)
50
€ 143,68
€ 2,874 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 2,874 | € 143,68 |
| 100 - 450 | € 2,799 | € 139,96 |
| 500+ | € 2,729 | € 136,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
40W
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products