
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Fall Time
5ns
Package Type
SO-16
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Series
STDRI
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Информацията за складовите наличности временно не е налична.
€ 4 986,36
€ 1,995 Each (On a Reel of 2500) (ex VAT)
2500
€ 4 986,36
€ 1,995 Each (On a Reel of 2500) (ex VAT)
Информацията за складовите наличности временно не е налична.
2500
| количество | Единична цена | Per Ролка |
|---|---|---|
| 2500 - 2500 | € 1,995 | € 4 986,36 |
| 5000+ | € 1,983 | € 4 957,20 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Fall Time
5ns
Package Type
SO-16
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Series
STDRI
Automotive Standard
No
Детайли за продукта
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.