STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252 STD65N55F3

Номер на артикул на RS: 795-9000Марка: STMicroelectronics№ по каталога на производителя: STD65N55F3
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

STripFET F3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Детайли за продукта

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 9,62

€ 1,925 Each (In a Pack of 5) (ex VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252 STD65N55F3
Изберете тип опаковка

€ 9,62

€ 1,925 Each (In a Pack of 5) (ex VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252 STD65N55F3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

STripFET F3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Детайли за продукта

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more