STMicroelectronics STripFET II N-Channel MOSFET, 17 A, 250 V, 3-Pin DPAK STD17NF25
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
250 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
29.5 nC @ 10 V
Width
6.2mm
Height
2.4mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 7,26
€ 1,452 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 7,26
€ 1,452 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 1,452 | € 7,26 |
| 25 - 45 | € 1,382 | € 6,91 |
| 50 - 120 | € 1,241 | € 6,20 |
| 125 - 245 | € 1,116 | € 5,58 |
| 250+ | € 1,061 | € 5,31 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
250 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
29.5 nC @ 10 V
Width
6.2mm
Height
2.4mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products