STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

Номер на артикул на RS: 795-6944Марка: STMicroelectronics№ по каталога на производителя: STB60NF06LT4
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-65 °C

Детайли за продукта

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 9,96

€ 1,991 Each (In a Pack of 5) (ex VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4
Изберете тип опаковка

€ 9,96

€ 1,991 Each (In a Pack of 5) (ex VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 20€ 1,991€ 9,96
25 - 45€ 1,891€ 9,46
50 - 120€ 1,70€ 8,50
125 - 245€ 1,53€ 7,65
250+€ 1,455€ 7,27

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-65 °C

Детайли за продукта

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more