
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
71nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Информацията за складовите наличности временно не е налична.
€ 35,88
€ 3,59 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
€ 35,88
€ 3,59 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
10
| количество | Единична цена |
|---|---|
| 10 - 99 | € 3,59 |
| 100 - 999 | € 3,39 |
| 1000+ | € 3,35 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
71nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.