Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Length
34.8mm
Height
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
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Информацията за складовите наличности временно не е налична.
€ 221,97
€ 22,20 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 221,97
€ 22,20 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
10
| количество | Единична цена |
|---|---|
| 10 - 24 | € 22,20 |
| 25+ | € 21,71 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Length
34.8mm
Height
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
