Технически документи
Спецификации
Brand
onsemiMount Type
Through Hole
Product Type
Optocoupler
Output Type
Phototransistor
Maximum Forward Voltage
1.3V
Packaging
Tube
Number of Channels
2
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Minimum Current Transfer Ratio
0.5%
Typical Fall Time
2.4μs
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Детайли за продукта
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Информацията за складовите наличности временно не е налична.
€ 24,68
€ 0,494 Each (In a Tube of 50) (ex VAT)
50
€ 24,68
€ 0,494 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 0,494 | € 24,68 |
| 100 - 950 | € 0,289 | € 14,44 |
| 1000 - 1950 | € 0,282 | € 14,09 |
| 2000 - 9950 | € 0,275 | € 13,74 |
| 10000+ | € 0,268 | € 13,39 |
Технически документи
Спецификации
Brand
onsemiMount Type
Through Hole
Product Type
Optocoupler
Output Type
Phototransistor
Maximum Forward Voltage
1.3V
Packaging
Tube
Number of Channels
2
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Minimum Current Transfer Ratio
0.5%
Typical Fall Time
2.4μs
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Детайли за продукта
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
