Технически документи
Спецификации
Brand
onsemiProduct Type
Optocoupler
Mount Type
Surface
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
4
Package Type
SMT
Typical Rise Time
4μs
Maximum Input Current
20mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
3%
Maximum Operating Temperature
110°C
Typical Fall Time
3μs
Minimum Current Transfer Ratio
0.2%
Standards/Approvals
UL and VDE, C-UL
Series
FOD
Automotive Standard
No
Детайли за продукта
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Информацията за складовите наличности временно не е налична.
€ 254,95
€ 0,255 Each (On a Reel of 1000) (ex VAT)
1000
€ 254,95
€ 0,255 Each (On a Reel of 1000) (ex VAT)
Информацията за складовите наличности временно не е налична.
1000
| количество | Единична цена | Per Ролка |
|---|---|---|
| 1000 - 1000 | € 0,255 | € 254,95 |
| 2000 - 4000 | € 0,247 | € 246,76 |
| 5000 - 7000 | € 0,24 | € 239,75 |
| 8000 - 9000 | € 0,234 | € 233,90 |
| 10000+ | € 0,228 | € 228,05 |
Технически документи
Спецификации
Brand
onsemiProduct Type
Optocoupler
Mount Type
Surface
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
4
Package Type
SMT
Typical Rise Time
4μs
Maximum Input Current
20mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
3%
Maximum Operating Temperature
110°C
Typical Fall Time
3μs
Minimum Current Transfer Ratio
0.2%
Standards/Approvals
UL and VDE, C-UL
Series
FOD
Automotive Standard
No
Детайли за продукта
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
