Технически документи
Спецификации
Brand
MicrochipProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
12V
Package Type
TO-247
Series
MSC035SMA070B4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
8Ω
Typical Gate Charge Qg @ Vgs
99nC
Maximum Power Dissipation Pd
1.6W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
2V
Forward Voltage Vf
1.8V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Информацията за складовите наличности временно не е налична.
€ 240,33
€ 8,011 Each (In a Tube of 30) (ex VAT)
30
€ 240,33
€ 8,011 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 90 | € 8,011 | € 240,33 |
| 120+ | € 7,355 | € 220,65 |
Технически документи
Спецификации
Brand
MicrochipProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
12V
Package Type
TO-247
Series
MSC035SMA070B4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
8Ω
Typical Gate Charge Qg @ Vgs
99nC
Maximum Power Dissipation Pd
1.6W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
2V
Forward Voltage Vf
1.8V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Детайли за продукта
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.