
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
150°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Страна на произход
China
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Информацията за складовите наличности временно не е налична.
€ 11,90
€ 2,379 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 11,90
€ 2,379 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 45 | € 2,379 | € 11,90 |
| 50 - 120 | € 2,051 | € 10,25 |
| 125+ | € 1,61 | € 8,05 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
150°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Страна на произход
China
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.