
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
299mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Информацията за складовите наличности временно не е налична.
€ 54,58
€ 2,729 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
20
€ 54,58
€ 2,729 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
20
| количество | Единична цена | Per Тръба |
|---|---|---|
| 20 - 98 | € 2,729 | € 5,46 |
| 100 - 198 | € 2,08 | € 4,16 |
| 200+ | € 1,847 | € 3,69 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
299mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.