Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
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JOIN FOR FREE
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Информацията за складовите наличности временно не е налична.
€ 3 921,68
€ 217,871 Each (In a Tray of 18) (ex VAT)
18
€ 3 921,68
€ 217,871 Each (In a Tray of 18) (ex VAT)
Информацията за складовите наличности временно не е налична.
18
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Детайли за продукта
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
